MTP75N06HD |
RFQ for MTP75N06HD |
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| Product | Manufacturers | Pack | D/C |
| MTP75N06HD | - | TO-220 | 06+ |
Features |
| • Ultra Low RDS(on), HighCell Density, HDTMOS• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature• Avalanche Energy Specified |
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GatetoSource Voltage - Continuous - Single Pulse |
VGS VGSM |
± 20 ± 30 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
75 50 225 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
150 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS = 10Vdc, PEAK IL =75Apk, L = 0.177mH, RG = 25) |
EAS |
500 |
mJ |
Thermal Resistance - Jun
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